The working principle of the MOSFET, the working principle of the MOSFET

There are several uses in your internal structure, working principle and circuitry of MOSFET.

It is "the ID of the channel flowing between the drain and the source, and the gate voltage control ID that is used to form a reverse bias formed by the PN junction between the gate and the channel". More precisely, the width of the path through which the ID flows, i.e., the cross-sectional area of the channel, is controlled by the change in the reverse bias of the PN junction, resulting in the depletion layer propagation change.

In the unsaturated region of VGS=0, the expansion of the transition layer is not very large, and according to the electric field of VDS applied between the drain and the source, some electrons in the source region are pulled away by the drain, that is, there is a current ID flowing from the drain to the source. The excessive layer that expands from the gate to the drain forms a part of the channel as a blockage type, and the ID is saturated. This state is called pinching.

This means that the transition layer blocks part of the channel, not the current being cut off.

In the transition layer, because there is no free movement of electrons and holes, it has almost insulating properties in an ideal state, and it is usually difficult for current to flow. However, at this time, the electric field between the drain and the source is actually two transition layers touching the lower part of the drain and the gate, and the high-speed electrons pulled away by the drifting electric field pass through the transition layer.

The saturation phenomenon of id occurs due to the almost constant strength of the drifting electric field. Second, the VGS changes in a negative direction, so that VGS=VGS(OFF), and the transition layer roughly becomes a state that covers the whole area. In addition, most of the electric field of VDS is added to the transition layer, and the electric field that pulls the electrons towards the drift direction is only a short part close to the source, which makes the current unable to flow.

MOSFET FETs are fabricated by traditional bulk semiconductor fabrication techniques, using a single crystal semiconductor wafer as the reaction zone, or channel. Most of the uncommon bulk materials are mainly amorphous silicon, polysilicon or other amorphous semiconductors in thin-film transistors or field-effect transistors. Field-effect transistors are based on organic semiconductors and often use organic gate insulators and electrodes.

A gate can be thought of as a switch that controls a physical gate. This gate allows or hinders the flow of electrons by creating or eliminating a channel between the source and drain. If affected by an applied voltage, the flow of electrons will flow from the source to the drain.

The body is simply the block of the semiconductor where the gate, drain, and source are located.

Usually the body end is connected to the highest or lowest voltage in a circuit, depending on the type. The body and source are sometimes connected together because sometimes the source is also connected to the highest or lowest voltage in the circuit. Of course, sometimes some circuits do not have such a structure for FETs, such as cascaded transmission circuits and cascade circuits.

There are several uses in your internal structure, working principle and circuitry of MOSFET.

In a word, the working principle of the FET dry oak is the ID of the drain and source group flowing through the channel, and the gate voltage control ID of the anti-spike side deviation formed by the PN junction between the gate and the channel. A MOSFET is a semiconductor device that uses the electric field effect of the control input loop to control the output loop current.

The role of the MOSFET1. MOSFET can be applied to amplification. Due to the high input impedance of MOSFET amplifiers, the coupling capacitance can be smaller, eliminating the need for electrolytic capacitors.

2. MOSFET is very suitable for impedance transformation. It is often used for impedance conversion in the input stage of multistage amplifiers.

3. MOSFET can be used as a variable resistor.

4. The MOSFET can be easily used as a constant current source.

5. The FET can be used as an electronic switch.

Regarding the working principle of the FET, the Internet (including encyclopedias) all say this: "The ID of the channel flowing through the channel between the drain and the source, and the gate voltage control ID of the reverse bias formed by the PN junction between the gate and the channel", in fact, this sentence is a sick sentence, which is very awkward and difficult to understand;

The following points out that this sentence "disease" is in**; The words "use" and "to" are repeated, and the words "use" and "to" both use object A to make object B, for example, "use (to) inverter to control the speed of the motor"; But the meaning of "with" is completely different, "with" means that object A is used to make object B, for example, "the inverter is used to control the speed of the motor", if you say "use the inverter to control the speed of the motor", is it very difficult to understand? It's right, because it's a sick sentence;

The id of the channel flowing between the drain and the source" is repeated with the "id" at the end of this sentence, such as "motor speed, use (to) inverter to control the motor speed", do you think this sentence is also very awkward and awkward? The correct way to say it is "motor speed, use inverter to control" or "use inverter to control motor speed";

To sum up, this sentence should be "the ID of the channel flowing between the drain and the source is controlled by the gate voltage of the reverse bias formed by the PN junction between the gate and the channel" or "the ID of the channel flowing through the channel between the drain and the source is controlled by the reverse gate voltage formed by the PN junction between the gate and the channel", which is the correct description of the working principle of the MOSFET.