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Diodes and transistors are called semiconductor transistors, which are made of semiconductor crystals and have the function of transistors, referred to as semiconductor tubes or transistors. The bipolar transistor that relies on two kinds of carriers to form current in the transistor is called the bipolar transistor, and the other kind of transistor that conducts electricity by only one carrier and turns on and off under the control of the lateral electric field is called the field-effect transistor, and the field-effect transistor can be divided into junction field-effect transistor and MOS field-effect transistor according to the structure; According to the holes and electrons involved in the conduction of MOS FETs, the two types of MOS FETs are called PMOS FETs and NMOS FETs. From this point of view, "bipolar" and "unipolar" refer to the number of carriers in the transistor participating in electrical conduction, just like the difference between "duplex" and "simplex" in a communication system, rather than "double junction" and "single junction".
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The functions are similar, but the principles are different.
1. The transistor is a bipolar tube, that is, the tube is involved by two carriers, holes and free electrons, when the tube works.
MOSFETs are unipolar tubes, i.e., the tubes work with either only holes or only free electrons involved in conducting electricity, and there is only one type.
Carrier. 2. The transistor is a current control device, and there will be an output current when there is an input current.
MOSFETs are voltage control devices, and there is no input current and there is also output current.
3. The input impedance of the transistor is small, and the input impedance of the FET is large.
4. Some FET source and drain can be interchanged, but the collector and emitter of the triode cannot be interchanged.
Nowadays, CMOS is mostly used in integrated circuits because of its speed.
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Earlier, it was not called a field effect transistor, but a single junction transistor. I remember that it was written in a book before the seventies.
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Both transistors and MOSFETs can be used to make switches, so what is the difference between them?
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I think it can be understood as a "knot".
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MOSFET cannot be called a transistor. The functions of MOSFET and transistor are similar, but the working principle is different: 1. The triode is a bipolar tube, that is, there are two kinds of carriers inside the tube such as holes and free electrons; The MOSFET is a unipolar tube, that is, the tube either has only holes or only free electrons to participate in the conduction when it works, and there is only one type of carrier at the same time; 2. The transistor is a current control device, and it will only have input current.
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1. Differences in nature.
The transistor is a kind of semiconductor, which controls the current, is one of the basic components of semiconductors, and is the core component of electronic circuits.
MOSFETs are voltage-controlled semiconductor devices that control the electric field effect of the input loop to control the output loop current.
2. Differences in principle.
The concentration of most carriers in the emission area of the triode is greater than that of the base area, and the base area is very thin at the same time, and the impurity content is strictly controlled, so that once the power supply is connected, due to the positive deviation of the emission junction, most of the carriers in the emission area and most of the carriers in the base area are easy to diffuse to each other across the emission junction, and the concentration base of the former is greater than the latter, so the current through the emission junction is basically the flow of electrons.
The working principle of the MOSFET is the ID of the channel flowing through the drain source, and the gate voltage is used to control the width of the channel through which the PN junction between the gate and the channel is reversed, that is, the cross-sectional area of the channel.
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It can be distinguished according to the characteristics of the MOS: the input impedance is high, and the PV junction between the gate and the source of the MOSFET is reversed.
The insulation layer of the SiO2 version has a very high impedance and a junction weight of up to 10,000,000 ohms. The insulating grid type can reach 1000000000 100000000000000000. The transistor transmits a junction impedance of only a few thousand ohms.
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According to the model comparison data, it can be directly seen. And the parameters are also clear at a glance.
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The MOSFET is the Baimos tube.
It may not be easy to intuitively determine which material it is, because both transistors and MOS transistors have patches and to packages.
However, if you find that there are resistors connected between some of the pins of this IC, it may be that the probability of a triode is higher.
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The transistor is a current-controlled type.
MOSFETs are voltage-controlled.
I distinguish it from a model number:
MOSFET models such as IRF....
Transistor models such as domestic: 3DD, foreign: 2S....
FETs are nomenclated in two ways.
The first nomenclature is related to the bipolar triode, the third letter J stands for junction MOSFET, and O stands for insulated gate FET. The second letter represents the material, D is p-type silicon, and the inverse layer is N-channel; C is an n-type silicon p-channel. For example, 3DJ6D is a junction N-channel FET and 3DO6C is an insulated gate N-channel FET.
The second naming method is CS, CS stands for FET, the number represents the serial number of the model, and the letters represent different specifications in the same model. For example, CS14A, CS45G, etc.
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Transistors and MOSFETs are electronic components that are very commonly used in amplification and switching circuits.
1. Triode.
The original invention of the transistor quickly replaced the electron tube with its excellent performance, but later in the application of the transistor exposed some congenital deficiencies - defects caused by structural problems, in this situation it was urgent to manufacture a transistor that could overcome the defects of the transistor, so the field effect transistor was born.
2. a FET.
The most hail is that the input impedance is extremely high, which is incomparable to the triode, but its appearance has not completely replaced the triode like the transistor eliminating the electron tube, it is not omnipotent, and it is not as good as the triode in some sides, so it cannot be said in general terms who is good and who is not good.
Because the FET is developed on the basis of the triode, it is similar to the transistor in many aspects, and the two are perfectly matched and widely used.
There are several uses in your internal structure, working principle and circuitry of MOSFET.
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First, the reference is different.
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Their drive circuits are essentially different, first of all, the MOSFET is usually divided into junction MOSFET and insulated gate MOSFET, and the thyristor is usually divided into one-way thyristor and bidirectional thyristor (thyristor is also called thyristor, which can be divided into one-way thyristor and bidirectional thyristor), among which the insulated gate MOSFET is also called MOS transistor (there is a kind of MOSFET and transistor hybrid device called IGBT, commonly known as gated tube, the driving circuit of the device is almost the same as the driving circuit of the MOSFET), this drive belongs to voltage driveIn most applications such as power output and power conversion, it is best to use PWM (pulse width modulation) signal to control, and the rising edge of the square wave input to the gate is required to be steep (also known as totem pole output), and there must be a certain transient driving ability (because the gate of the MOSFET is equivalent to a capacitor, when the transient power of the driving signal is not enough, its original waveform will be changed, usually equivalent to an integrator), and when it is required to be turned on, the gate voltage should be about 10-20V higher than the source pole, The typical value is 15V, and in order to ensure that the MOSFET is turned off reliably, the voltage should be -15V at this time, in practical applications, in order to reduce the excessive power consumption of the FET or prevent its damage, it is generally necessary to add such as overcurrent protection and related absorption circuits, and try to achieve the same working frequency of the FET and the resonant frequency of the load, the typical application is the induction cooker, the current flowing through the furnace (plus ** circle) and the current flowing through the absorption capacitor are both very large, but the phase is different, cancel each other, The total current after superposition is smaller, i.e. the current flowing through the FET (IGBT in practice) is smaller. The following diagram shows a typical drive circuit for a MOSFET: >>>More