How can I identify different substances in semiconductor devices such as transistors?

Infrared-activated substances in semiconductor devices emit characteristic near-field spectral signals. These signals allow the identification of different substances. The capture of these signals requires scattering scanning near-field optical microscopy.

The only scattering scanning near-field optical microscope (S-SNOM) with a resolution of 10 nm on the market is produced in Germany.

In 2010, the article "Infrared Spectroscopic Near-Field Mapping of Single Nanotransistors" was published in NanoTech.

In addition to the identification of substances, scattering scanning near-field optical microscopy can also be used to study chemical composition, crystal structure, mechanical tension, radiation damage, carrier concentration, mobility, electric field distribution, etc., in applications such as polar crystals, semiconductor nanodevices, metamaterials and nanoantennas, nanowires and nanoparticles, polymers and proteins.

An integrated circuit composed of components. Abbreviated as MOSIC. In 1964, the insulated gate FET was developed.

It was not until 1968 that the stability of MOS devices was solved, and MOSIC was rapidly developed. Compared with bipolar integrated circuits, MOSIC has the following advantages: Simple manufacturing structure and convenient isolation.

The small circuit size and low power consumption make it suitable for high-density integration. The MOS tube is a bidirectional device with high design flexibility. Have a unique ability to work dynamically.

Good temperature characteristics. The disadvantage is that the speed is lower and the driving capacity is weaker. It is generally believed that MOS integrated circuits have low power consumption and high integration, and should be used as digital integrated circuits. Bipolar integrated circuits are suitable for high-speed digital and analog circuits.

According to the channel conduction type of transistor, it can be divided into P-groove MOSIC, N-groove MOSIC and complementary MOSIC that combines P-groove and N-groove MOS transistors into a circuit unit, which are called PMOS, NMOS and CMOS integrated circuits respectively. With the development of process technology, CMOS integrated circuits have become the mainstream of integrated circuits, and the process is becoming more and more perfect and complex, from P-well or N-well CMOS to double-well CMOS process. In the 80s, BiCMOS integrated circuit architectures that combined the advantages of bipolar circuits and complementary metal-oxide-semiconductor (CMOS) circuits appeared.

According to the gate material, it can be divided into lead gate, silicon gate, silicide gate and refractory metal (such as molybdenum, tungsten) gate and other MOSIC, and the gate size has entered the sub-micron (micron) and strong submicron (below micron) order from micron. In addition, MOSIC with different MOS IC structures has been developed: for example, the floating gate avalanche injection MOS (FAMOS) structure is used for rewritable read-only memory; The diffusion self-aligning MOS (DMOS) structure and V-slot MOS structure can meet the requirements of high speed and high voltage.

In recent years, CMOS structures with sapphire as insulating substrates have been developed, which have the advantages of radiation resistance, low power consumption and high speed. MOSIC is widely used in computers, communications, electromechanical instruments, home appliance automation, aerospace and other fields, which can make the whole machine smaller in size, fast in work, complex in function, high in reliability, low in power consumption and low in cost.

Semiconductor devicesTypically, these semiconductor materials are silicon, germanium, or gallium arsenide, which can be used as rectifiers, oscillators, luminaires, amplifiers, light meters, and other devices. To distinguish it from integrated circuits, it is sometimes referred to as a discrete device. The basic structure of most two-terminal devices (i.e., crystal diodes) is a p-n junction.

Using different semiconductor materials, different processes and geometries, a wide variety of crystal diodes with different functions and uses have been developed, which can be used to generate, control, receive, transform, amplify signals and convert energy. Crystal diodes can cover frequencies from low frequency, high frequency, microwave, millimeter wave, infrared and light waves. Three-terminal devices are generally active devices, and the typical representatives are various transistors (also known as transistors).

Transistors can be divided into two types: bipolar transistors and field-effect transistors. Depending on the application, transistors can be divided into power transistors, microwave transistors, and low-noise transistors. In addition to general transistors used for amplification, oscillation, and switching, there are also some special-purpose transistors, such as optical transistors, magneto-sensitive transistors, field effect sensors, etc.

These devices can not only convert the information of some environmental factors into electrical signals, but also have the amplification effect of general transistors to obtain larger output signals. In addition, there are some special devices, such as single junction transistors can be used to generate sawtooth waves, thyristors can be used in various high-current control circuits, and charge-coupled devices can be used as rubber devices or information storage devices. In military equipment such as communications and radar, weak signals are mainly received by semiconductor receiving devices with high sensitivity and low noise.

With the rapid development of microwave communication technology, microwave half-conductor low-noise devices have developed rapidly, and the operating frequency has been continuously improved, while the noise figure has been decreasing. Microwave semiconductor devices have been widely used in air defense and anti-missile, electronic warfare, C(U3)I and other systems due to their excellent performance, small size, light weight and low power consumption.

Transistors and diodes (diodes) are not the same thing.

1. Transistors and diodes (diodes) are defined differently.

A transistor is a solid-state semiconductor device, including diodes, transistors, field effect transistors, thyristors, etc., sometimes specifically referred to as bipolar devices.

A diode, an electronic component, is a device with two electrodes that allows only a single direction of current to flow through it, and many are used to apply its rectification function. Varactor diodes (VAFIC diodes) are used as electronic tunable capacitors.

2. Transistors and diodes (diodes) have different functions.

Transistors have a variety of functions such as detection, amplification, switching, voltage regulation, signal modulation, etc. A transistor is a variable current switch that controls the output current based on the input voltage.

Unlike ordinary mechanical switches, transistors use telecommunications to control their own opening and closing, and the switching speed can be very fast, up to 100 GHz in the lab.

The current directivity of a diode is often referred to as the "rectification" function. The most common function of a diode is to allow only current to pass through a single direction (known as forward bias) and to block it in reverse direction (known as reverse bias). Therefore, the diode can be thought of as an electronic version of the check valve.

3. The types of transistors and diodes (diodes) are different.

Transistors can be divided into various types, such as low-noise amplification transistors, medium and high frequency amplification transistors, low-frequency amplification transistors, switching transistors, Darlington transistors, high-back-voltage transistors, resisted transistors, damped transistors, microwave transistors, phototransistors, and magnetic transistors.

There are many types of diodes, which can be divided into germanium diodes (GE tubes) and silicon diodes (Si tubes) according to the semiconductor materials used. According to its different uses, it can be divided into detection diodes, rectifier diodes, voltage regulator diodes, switching diodes, isolation diodes, Schottky diodes, light-emitting diodes, silicon power switching diodes, rotary diodes, etc.

According to the die structure, it can be divided into point contact diode, surface contact diode and planar diode. The point-contact diode is pressed on the surface of a smooth semiconductor wafer with a very thin metal wire, and a pulse current is passed to make one end of the contact wire and the wafer firmly sintered together to form a "p-n junction".

Planar diode is a special silicon diode, which can not only pass large currents, but also has stable and reliable performance, and is mostly used in switching, pulse and high-frequency circuits.

Semiconductor materials can be used to manufacture diodes, transistors, MOSFETs and other devices.

In many books, people refer to semiconductor transistors as "transistors", (for example: transistor amplification circuits, that is, transistor amplification circuits) generally no one abbreviates diodes as such.

Therefore, according to the general understanding, transistor refers to a transistor, and of course it is not the same thing as a diode.

Diodes are a type of transistor, they are not the same thing, they belong to the relationship.

In the field of integrated circuits, feature size refers to the smallest size in a semiconductor device. In the CMOS process, the feature size is typically represented by the width of the "gate", i.e., the channel length of the MOS device. In general, the smaller the feature size, the higher the integration of the chip, the better the performance, and the lower the power consumption.

While there are obvious benefits to the reduction of feature size (channel length), there are also a series of negative effects, collectively known as the "short channel effect". For example, the MOSFET emphasizes the control of the gate voltage, but when the channel is short to a certain extent, there will be a leakage current between the source and the drain, and even if the gate voltage is removed, the MOS may be turned off.

The characteristic size of semiconductor devices originally refers to the physical features, the general outline of the object, and modern computer knowledge is extended to the integration degree and characteristic size. Feature size usually refers to the smallest size of a semiconductor device in an integrated circuit, such as the gate length of a MOS transistor. The feature size is an important measure of the manufacturing and design level of integrated circuits, and the smaller the feature size, the higher the integration degree of the chip.

The MOS process refers to the smallest channel size or the smallest gate width in the process; Bipolar refers to the minimum width of the emitter bar. The real feeling of this data still needs to be more intuitive in design or production, and the theoretical answer looks a little abstract, just know that the size is getting smaller and smaller, so that the device size can be smaller.

First of all, a transistor literally: a three-pin tube. A word coined by Chinese, triode (electronic triode) is the only English translation of the word "triode" in the English-Chinese dictionary. So the transistor includes BJT.

In fact, we generally think of a transistor as a BJT (bipolar transistor). So BJT is equal to the transistor.

Upstairs is right, one current control, one voltage control.

Share how to measure the output point of the Siemens S7-200 transistor output PLC!

Semiconductor devices made of silicon, germanium and other semiconductor materials are called transistors.

A transistor is a (controllable) semiconductor device b current controlled.

The answer to the question is B, the transistor in the circuit is connected and disconnected by the loading in the direction of the base voltage, and the current amplification effect is directly related to the base current.