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The transistor must have certain external conditions to amplify the signal, that is, to add a forward voltage to the transmitting junction of the transistor (customarily called forward bias or forward bias), and a reverse voltage to the collector junction (commonly known as reverse bias or reverse bias). The main applications of transistors are divided into two aspects. First, it works in saturation and cut-off states and is used as a transistor switch; The second is to work in an amplified state and be used as an amplifier.
Amplification area: At this time, IC= 0 8IB, IC basically does not change with the change of UCE, at this time, the transmitting junction is positively biased, and the collector junction is reversed. Amplification Status:
UB 0, transmit junction positive bias, collector junction reverse bias, ic= ib.
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One-way energizing, some things can't use alternating current, the diode reverse resistance is very large, and the forward direction is very small, which plays such a role.
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The transistor can amplify the current or voltage. Current amplification = ice ibe=(ic-icbo) (ibe-icbo) ic ib, voltage amplification au=uo ui.
1. The current amplification of the transistor is also known as the current distribution coefficient of the transistor, and the letter is a Greek letter.
The current amplification factor is the ratio of the number of electrons drifting to the collector region or their change to the number of electrons recombined in the base region or their change, that is, the ratio of ICE to IBE. Denoted by . β=ice/ibe=(ic-icbo)/(ibe-icbo)≈ic/ib
2. The voltage amplification factor refers to the ratio of the output voltage of the amplifier circuit to the input voltage. If it is set to sinusoidal input and output, UI is the input voltage, and UO is the output voltage, then the voltage amplification factor AU=UO UI.
Extended Information: Transistor Amplification Principle:
1. The launch zone emits electrons to the base zone.
The power supply UB is added to the emission junction through the resistor RB, and the emission junction is positively biased, and most of the carriers (free electrons) in the emission region continuously cross the emission junction into the base region, forming the emitter current IE. At the same time, most of the carriers in the base region also diffuse to the emission region, but since the concentration of most carriers is much lower than the concentration of carriers in the emission region, this current can be disregarded, so it can be considered that the emission junction is mainly an electron flow.
2. Diffusion and recombination of electrons in the base region.
After the electrons enter the base region, they are first densely packed near the emission junction, and gradually form an electron concentration difference, which promotes the electron flow to diffuse to the collector junction in the base region, and is pulled into the collector region by the collector electric field to form a collector current IC. There is also a small fraction of electrons (because the base region is very thin) that reunites with the holes in the base region, and the ratio of the diffusion electron flow to the composite electron flow determines the amplification ability of the triode.
3. Collect electrons in the collector area.
Due to the large external reverse voltage of the collector junction, the electric field force generated by this reverse voltage will prevent the electrons in the collector region from spreading to the base region, and at the same time pull the electrons that diffuse to the vicinity of the collector junction into the collector region to form the collector main current ICN. In addition, a small number of carriers (holes) in the collector region will also produce drift motion, and the reverse saturation current will flow to the base region, which is represented by ICBO, and its value is small, but it is extremely sensitive to temperature.
Encyclopedia--Voltage amplification.
Encyclopedia--Transistors.
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A transistor is composed of two N-type or P-type diodes sandwiched between a layer of P-type or N-type diodes, and is divided into a collector, a base, and an emitter. The collector is responsible for replenishing the energy, the base is responsible for trigger control, and the emitter is responsible for output. Due to its special structure, the amount of electrons injected in the emission region is several times the amount of electrons at the base, when the base signal current is turned on, the emitter current emission is triggered, such as the base enters an electron, the emitter may flow out of several or hundreds of electrons, so as to achieve the so-called current amplification.
1) In order to facilitate the emission of electrons by the emission junction, the doping solubility of the semiconductor in the emission region is much higher than that of the semiconductor in the base region, and the area of the emission junction is small.
2) Although the emission area and the collector area are doped semiconductors of the same property, the doping solubility of the emission area is higher than that of the collector area, and the area of the collector junction is larger than that of the transmitting junction, which is convenient for collecting electrons.
3) The base region of the two PN junctions connecting the emission junction and the collector junction is very thin, and the doping solubility is also very low.
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Hello, the most significant function of the transistor is to amplify the signal. It is often used in amplification circuits and oscillation circuits.
In order to make the transistor work in the amplified state, a bias resistance and a collector resistance are set in the triode circuit, and the output voltage is obtained by dividing the voltage of two resistors, which is a fixed bias amplification circuit, and there is a partial bias amplification circuit. I've been studying lately, so I can only explain that, and there's a lot more to come. It's complicated.
The tube voltage drop UCE means that the voltage between the collector and the emitter is normal.
Forward bias: The voltage at the p-terminal is higher than that at the n-terminus. >>>More
Function: Amplification of electric current.
Characteristics: A small change in the base emitter current can cause a large change in the pole emitter current. >>>More
The transistor is a kind of control element, mainly used to control the size of the current, taking the common emitter connection method as an example (the signal is input from the base, output from the collector, and the emitter is grounded), when the base voltage UB has a small change, the base current IB will also have a small change, controlled by the base current IB, the collector current IC will have a big change, the larger the base current IB, the larger the collector current IC, on the contrary, the smaller the base current, the smaller the collector current, That is, the base current controls the change of collector current. But the change in collector current is much greater than the change in base current, and this is the amplification effect of the transistor. The ratio of the change in IC to the change in IB is called the magnification of the transistor ( =δic δib, δ indicates the amount of change. The magnification of the transistor is generally in the tens to hundreds of times. >>>More