Hello, do you have any information about silicon single crystal furnace? Thank you for the equipment

The temperature of the high-temperature single crystal furnace has high precision, stability, temperature measurement repeatability of 2k, and the response time is 10ms.

Hello, we are glad to serve you and give you the following answer: the single crystal furnace does not conduct the heating of polysilicon, but uses heat transfer to achieve heating. Causes of the problem:

1.Polysilicon contains too many gases, which will hinder the transfer of heat, thus affecting the heating effect of polysilicon. 2.

The temperature of the monocrystalline furnace is too low to transfer enough heat to the polysilicon. 3.The thickness of polysilicon is too large, which hinders the transmission of heat, which affects the heating effect of polysilicon.

Workaround and practice steps:1Check whether the polysilicon contains too much gas, and if so, take appropriate measures to remove these gases.

2.Check that the temperature of the single crystal furnace is too low, and if so, adjust the temperature to bring it to the appropriate level. 3.

Check if the thickness of the silicon is too large, and if so, reduce the thickness of the silicon to better transfer heat. Related knowledge: When the monocrystalline furnace heats the polysilicon, a large amount of heat is generated, which can be transferred to the polysilicon through heat transfer.

However, if there are too many gases in the polysilicon, these gases will hinder the heat transfer and affect the heating effect of the polysilicon. If the temperature of the monocrystalline furnace is too low to transfer enough heat to the polysilicon; If the thickness of the polysilicon is too large, it will also hinder the heat transfer, which will affect the heating effect of the polysilicon. Therefore, when heating polysilicon, attention should be paid to controlling these factors in order to achieve the ideal heating effect.

The collapse method of monocrystalline silicon is usually to first prepare polycrystalline silicon or amorphous silicon, and then use the straight-pull method or suspension zone melting method to grow rod-shaped monocrystalline silicon from the melt. Monocrystalline silicon rods are the raw materials for the production of monocrystalline silicon wafers. The final product is monocrystalline silicon wafers, which are used in semiconductor technology.

The preparation of polysilicon and amorphous silicon is not too big a problem (raw material silica is easier to find, and the main component of sand and gravel is silica), and the main problem is purification. The purity of the polycrystalline raw material required to produce monocrystalline silicon must be above. Generally, the modification of high-purity silicon purified by industry is only 99%, and higher purity silicon is generally prepared by local melting method.

The furnace body includes a frame, a crucible drive device, a main furnace chamber, a flap valve, a sub-furnace chamber, a seed crystal lifting mechanism, a hydraulic drive device, a vacuum system, an argon punching system and a water cooling system. The frame consists of a base, an upper column, and a lower column, which is the support device for the furnace. The crucible drive device is installed on the platform in the base, the main furnace chamber (composed of the furnace bottom plate, the furnace bottom, the furnace barrel and the furnace cover) is installed on the upper plane of the base, the top is sealed and connected with the flap valve, the auxiliary chamber is placed on the flap valve, the lifting head is installed on the auxiliary chamber, the crucible drive device is sealed and connected with the furnace chamber through the bellows, and the lifting cylinder in the hydraulic system is installed on the lower column.

The hydraulic pump is placed in the appropriate position near the main engine, the vacuum system and the water cooling system are fixed on the frame, the main furnace chamber is the heart of the furnace, and the thermal field system is installed inside.

In addition, there are electrical parts, control cabinets, heating systems, etc.

You can find Changshan Jingyu Electronics, which specializes in single crystal furnace accessories and consumables.

Monocrystalline silicon growth furnace 1 is a manufacturing equipment that produces monocrystalline silicon by the straight-pull method. It is mainly composed of three parts: the main engine, the heating power supply and the computer control system.

1. Host part:

Rack, double columns.

Double-layer water-cooled furnace body.

Water-cooled seat.

Jingxin banquet body lifting and rotating mechanism.

Crucible lifting and rotating mechanism.

Argon system. Vacuum system and automatic furnace pressure detection control.

Water cooling system and a variety of safety and security devices.

There is a secondary feeding opening.

2. Heater power supply:

The all-water-cooled power supply device adopts patented power supply or original imported IGBT and ultra-fast recovery diode and other power devices. It is equipped with a special high-frequency transformer hole caller to form a new generation of high-frequency switching power supply. The phase-shifted full-bridge soft switch (ZVS) and CPU independent control technology are used to improve the power conversion efficiency and eliminate the need for power factor compensation devices.

3. Computer control system:

Using PLC and upper-level industrial tablet PC, equipped with large-screen touch Nakai HMI human-machine interface, high-pixel CCD diameter measurement ADC system and "automatic CZ crystal growth SCADA monitoring system" with independent intellectual property rights, it can realize automatic control of the whole process from vacuum extraction - leak detection - furnace pressure control - melting - stabilization - fusion - crystal introduction - shoulder release - shoulder rotation - equal diameter - finishing - furnace shutdown.