What are the characteristics of magnetoresistive sensors and Hall sensors in terms of working princi

A magnetoresistive element is similar to a Hall element, but it works by harnessing the magnetoresistive effect (or Gaussian) of a semiconductor material.

effect). with the Hall effect.

The differences are as follows; That is, the Hall potential refers to the transverse voltage perpendicular to the direction of the current, while the magnetoresistive effect is the change in resistance along the direction of the current.

The working principle of the Hall sensor is based on the Hall effect, which is generally used to directly measure the Hall potential difference.

to measure the strength of the magnetic field.

It can also be used to determine the intensity of magnetic induction.

Direction. Magnetoresistive sensors measure the magnitude and direction of a magnetic field by using the change in the resistance of an alloy band placed in a magnetic field.

Like most solid-state sensors, magnetoresistive sensors operate with unbalanced bridges.

Form output, which directly converts the change in reluctance into a voltage output.

Magnetoresistive sensors are caused by changes in the resistance of the element due to a change in magnetic flux. Magnetoresistive sensors can be fabricated on silicon wafers and formed into products. Its sensitivity and linearity have been able to meet the requirements of the magnetic compass, and the performance in all aspects is significantly better than that of Hall devices.

Hall effect: if the conductor with current i is placed in a magnetic field perpendicular to it, then a potential difference uh will be produced on both sides of the conductor P1 and P2, which is proportional to the current i and the magnetic induction intensity b, and inversely proportional to the thickness of the conductor d.

There is a Hall semiconductor chip in the magnetic field, through which a constant current i passes from A to B. Under the action of the Lorentz force, the flow of electrons from i is shifted to one side as it passes through the Hall semiconductor, causing the chip to create a potential difference in the direction of the cd, which is known as the Hall voltage.

The Hall voltage varies with the change of the strength of the magnetic field, the stronger the magnetic field, the higher the voltage, the weaker the magnetic field, the lower the voltage, the Hall voltage value is very small, usually only a few millivolts, but by amplification by the amplifier in the integrated circuit, the voltage can be amplified enough to output a strong signal. In order for Hall ICs to play a sensing role, it is necessary to change the magnetic field strength by mechanical methods. The method shown in the figure below uses a rotating impeller as a switch to control the magnetic flux, and when the impeller blades are in the air gap between the magnet and the Hall integrated circuit, the magnetic field deviates from the integrated sheet and the Hall voltage disappears.

In this way, the change of the output voltage of the Hall IC can indicate a certain position of the impeller drive shaft, and by using this working principle, the Hall IC chip can be ignited with an action timing sensor. Hall-effect sensors are passive sensors that require an external power supply to operate, a feature that allows them to detect operation at low speeds.

A Hall sensor is a type of sensor that generates an output voltage pulse when an alternating magnetic field passes through it. The amplitude of the pulse is determined by the field strength of the excitation magnetic field. As a result, Hall sensors do not require an external power supply.

Hall sensors can be widely used in:

1. Electronic water meter, gas meter, electricity meter and remote meter reading system.

2. Control the measurement of the conveying speed in the equipment.

3. Rotation and speed control of brushless DC motor.

4. Measurement of rotational speed in engineering and other mechanical automation applications 5. Tachometer, speedometer and other rotor measuring devices.

The former is by changing his cutting magnetic field to produce an electric current that outputs a positive spin wave, while the latter outputs a square wave using the Hall effect.

Principle: Magnetoresistance is the value of the resistance changed by the magnetic field, and Hall is the Hall effect, which is not similar in use, and the parameters are somewhat different.

1. The difference in the number of plug wires.

There are three external plug wires for Hall sensors, two of which are power cables and one is signal cables; There are two external plug cables for magnetoelectric sensors, both of which are signal cables.

2. The difference between divisions:

Hall sensors are "active" sensors and require a power supply for external power; Magnetoelectric sensors are "passive" sensors that do not require an external power supply from a power supply.

3. The difference in working principle:

The magnetoelectric sensor is a sensor that uses the principle of electromagnetic induction to convert the input movement speed into the output of the induced electric potential, and can convert the mechanical energy of the measured object into an easy-to-measure electrical signal without an auxiliary power supply;

Hall sensor is based on the principle of Hall effect, under the action of Lorentz force, the electron flow of the bias current i is offset to one side when passing through the Hall semiconductor, so that the chip produces a potential difference in the CD direction, generates Hall voltage, and requires an auxiliary power supply to work normally.

Hall sensor is a kind of magnetic field sensor made according to the Hall effect. The Hall effect is a type of magnetoelectric effect, which was discovered by Hall (1855-1938) in 1879 while studying the conductive mechanism of metals.

Later, it was found that semiconductors, conductive fluids, etc. also have this effect, and the Hall effect of semiconductors is much stronger than that of metals. The Hosoojuer effect is a basic method to study the properties of semiconductor materials.

The Hall coefficient measured by the Hall effect experiment can determine the conductive type, carrier concentration and carrier mobility of semiconductor materials.

Reading guide] For the principle of Hall sensor,We may not understand its operation。 In fact, in our real life, there are quite a few products made using this principle. In the following article, we will study the principle of Hall sensors from three parts: Hall effect, Hall element, and Hall sensor.

Let everyone have a good understanding of the principle of Hall sensors.

First of all, let's talk about Hall sensors, which are essentially magnetic sensors. We can use this product to do some detection of the magnetic field, and by detecting it, we can understand how it changes. We can use this product in a variety of magnetic field-related applications.

The Hall effect is the basis of the Hall sensor, which consists of the Hall element and the associated auxiliary circuitry. These products are widely used in our industrial production, transportation, and even in our daily lives.

Sensor. First of all, let's talk about the Hall effect, in fact, the left and right ends of this semiconductor sheet are energized i, and then there is a certain magnetic induction in the relatively perpendicular direction of the sheet, which requires a uniform magnetic field and a strength of b. At this time, a potential difference is generated in the direction of the vertical current and the magnetic field, and this potential difference is the UH Hall voltage.

Sensor. The relative relationship between these fingerprint labels is u(h)=kib d. In this formula, d is the thickness of the lamellae, and k is what we call the Hall coefficient, and its magnitude is related to the lamellar material.

This whole is the Hall effect, which was discovered by the German physicist Hall.

The Hall element is actually based on the Hall effect, which is made of semiconductor materials. This type of component is sensitive to magnetic fields, and it also has many advantages such as simple structure, small size, wide frequency shed, and wide response or large output voltage variation. We use our products in the measurement industry, automation, computer and information technology and other related fields.

Sensor. Hall sensors are Hall elements and amplifier circuits, temperature compensation circuits, and regulated power supply circuits, which are obtained by integrating them on a single chip. We say that Hall sensors are sometimes called Hall ICs.

This is precisely because of its small size, which can be said to be the outline drawing of one of the models of them.

Sensor. Finally, we still have to say one point, that is, for the role of Hall sensors, we have already seen it. We continue to develop it to make some of its features work better for us, which is the main reason why we need to practice it continuously.

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Summary. Hello, dear.

The principle of a Hall current sensor.

Hall devices are magnetoelectric conversion devices made of semiconductor materials. If a control current IC is introduced at the input, a Hall potential VH occurs at the output when a magnetic field B passes through the sensing surface of the device. The magnitude of the Hall potential vh is proportional to the product of the control current ic and the magnetic flux density b, i.e.,

vh=khicbsinθ

Hall Effect Sensor Electromagnetics Principle.

The principle of the Hall current sensor is a magnetoelectric converter differential nuclear device made of semiconductor materials. If a control current IC is introduced at the input, a Hall potential VH occurs at the output when a magnetic field B passes through the sensing surface of the device. The magnitude of the Hall potential vh is proportional to the product of the control current clap ic and the magnetic flux density b, i.e., the virtual reed

vh=khicbsinθ

The relationship between electromagnetism and electrical engineering and its automation.

The development of electrical engineering and its automation began with electromagnetism. Electrical engineering and its automation high volt is an important basis for China's economic development, and it is an interdisciplinary discipline that integrates new achievements in electrical energy conversion, electromagnetism, automatic control, microelectronic technology and electronic information, and computing machine technology. Steps.

When a conductive material is in a magnetic field, the carriers of the conductor or semiconductor will be deflected by the Lorentz force, accumulating charges at both ends and creating a Hall electric field. If the effect of the Hall electric field and the Lorentz force of the carriers of a certain velocity is exactly canceled, then the carriers greater or less than the velocity will be deflected, so that the number of carriers moving in the direction of the applied electric field will decrease, and the resistance will increase, showing a transverse magnetoresistive effect.

The Hall sensor is a kind of magnetic field sensor made according to the Hall effect. The Hall effect is a type of magnetoelectric effect.

According to the principle of the Hall effect, the magnitude of the Hall potential depends on: Rh is the Hall constant bridge, which is related to the semiconductor material; i is the bias current of the Hall element; b is the magnetic field strength; d is the thickness of the semiconductor material.

If a uniform magnetic field with a magnetic induction intensity of b is applied to both ends of the semiconductor sheet to control the current i and apply a uniform magnetic field of magnetic induction intensity b in the vertical direction of the sheet, a Hall voltage with a potential difference of UH will be generated in the direction perpendicular to the current and the magnetic field.