The development history of internal memory, the future development trend of memory

A: Dear, the future development trend of memory is that the global revenue of the new generation of memory will maintain an annual growth rate over the next 8 years, and the revenue is expected to be one million dollars in 2025. The major drivers for the growth of the next-generation memory market are the demand for big data for general-purpose storage devices; increased demand for enterprise storage applications; And there is a need for high-bandwidth, low-power, and highly scalable storage devices for artificial intelligence (AI), Internet of Things (IoT), and big data.

Of all the major applications of next-generation memory, enterprise storage accounts for the largest share of the next-generation memory market. The demand for enterprise storage is more due to the growth of global date centers. The increasing demand for data storage capabilities in cloud storage and data centers is also creating a demand for next-generation storage storage devices in enterprise storage.

Of all memory technologies, Feram is the fastest-growing market for next-generation non-volatile memory, approximately. This growth can be attributed to its improved performance, higher endurance, lower power consumption, better scalability, and extremely high write endurance, as well as higher write speeds than other non-volatile memory technologies.

The industry started late and has a weak technical foundationThe development of memory chips in China is relatively late, and the industry has almost no production capacity before 2016, and memory chips are extremely dependent on imports. In the face of the monopoly advantage of foreign companies in the memory chip industry, China has begun to invest heavily in the memory chip industry in recent years.

At present, the market share of enterprises in Chinese mainland in related fields is still low, and large-scale investment at the national ** level has the opportunity to quickly cut into related fields, which is also a reliable and important step on the road to chip localization.

The memory in a computer can be divided into primary memory and auxiliary memory according to its purpose, the main memory is also called internal memory (referred to as memory), and the auxiliary memory is also called external memory (referred to as external memory). Memory is essentially a set of integrated circuits with data input, output and data storage functions. Memory can be divided into read-only memory, read-only memory eprom, and random access memory RAM according to the function of storing information.

When we talk about memory, we usually mean RAM. Since the CPU can only process data directly in memory, the speed and size of the memory has a considerable impact on the performance of the computer.

FPM (Fast Page Mode) is a common memory used in PCs in the 386 era, because FPDRAM uses the same circuit to access data, so it only transmits data every 3 clock pulse cycles, which makes it not very fast.

EDO (Extended Data Output) memory eliminates the time interval between the motherboard and the memory, and transmits data every 2 clock pulse cycles, greatly reducing access time.

Since the introduction of the Intel Celeron series and AMD K6 processors and associated main envy chipset, SDRAM locks the CPU and RAM together through the same clock, enabling the RAM and CPU to share a single clock cycle and work synchronously at the same speed. It uses a new 64-bit data read/write form, using dual in-line DIMM memory modules, which are also the memory of choice for Pentium II and Pentium III computer systems.

SDRAM memory from the early 66MHz, the development of the later 133MHz, so many users will be good brand PC100 brand memory overclocked to 133MHz to use to get CPU overclocking success, it is worth mentioning that there are some PC150, PC166 specification memory on the market.