The basic parameters of IRF630, the parameters of IRFP460

Basic parameters. Drain current, ID max: 9A

Voltage, VDS Max: 200V

On-state resistance, rds(on):

Voltage @ RDS measurement: 10V

Voltage, VGS Max: 3V

Power, PD: 100W

Package Type, Replaces: SOT-78B

Pin Pitch: Time, TRR Typical: 170ns

Number of transistors: 1

Transistor type: MOSFET

Full power temperature: 25°C

Capacitance value, CISS typical: 540pf

Current, IDM pulse: 36A

Surface Mount Devices: Through-hole mounting.

Pin format: 1G 2+ socket D 3S

Threshold voltage. VGS TH Minimum: 2V

Threshold voltage, VGS TH maximum: 4V.

Drain current, ID max: 9A

Voltage, VDS Max: 200V

On-state resistance, rds(on):

Voltage @ RDS measurement: 10V

Voltage, VGS Max: 3V

Power, PD: 100W

Package Type, Replaces: SOT-78B

Pin Pitch: Time, TRR Typical: 170ns

Number of transistors: 1

Transistor type: MOSFET

Full power temperature: 25°C

Capacitance value, CISS typical: 540pf

Current, IDM pulse: 36A

Surface Mount Devices: Through-hole mounting.

Pin format: 1G 2+ socket D 3S

Threshold voltage, VGS TH minimum: 2V

Threshold voltage, VGS TH maximum: 4V.

FET type: MOSFETN channel, metal oxide.

On-state RDS (max) ID, VGS 25° C: 270 mOhm 12A, 10V

Drain-to-source voltage (VDSS): 500V

Current - Continuous Drain (ID) VGS(TH) at 25° C:20AID (Max): 4V 250 A Gate Charge (QG) VGS:

210NC 10V Input Capacitance at VDS (CISS): 4200PF 25V Power - Max: 260W

Mounting Type: Through Hole.

Encapsulation Case: TO-247AD

Packing: Pipe fittings.

Basic parameters. Drain current, ID max: 9A

Voltage, VDS is the most significant: 200V

On-state resistance, rds(on):

Voltage @ RDS measurement: 10V

Voltage, VGS Max: 3V

Power, PD: 100W

Package Type, Replaces: SOT-78B

Pin Pitch: Time, TRR Typical: 170ns

Number of transistors: 1

Transistor type: MOSFET

Full power temperature: 25°C

Capacitance value, CISS typical: 540pf

Current, IDM pulse: 36A

Surface Mount Devices: Through-hole mounting.

Pin format: 1G 2+ socket D 3S

Threshold voltage, VGS TH minimum: 2V

Threshold voltage, VGS TH maximum: 4V.

IRF640 in TO-220AB package.

Transistor polarity: n-channel.

Drain current, ID max: 18A

Voltage, VDS Max: 200V

On-state resistance, rds(on):

Voltage @ RDS measurement: 10V

Voltage, VGS Max: 4V

Package Type: TO-220AB

Number of pins: 3 power, PD: 150W

Package Type: TO-220AB

Transistor type: MOSFET

Thermal resistance, junction to housing a: 1°C W

Voltage VGS @ RDS ON Measurements: 10V Voltage, VDS Typical: 200V

Current, id continuous: 18A

Current, IDM pulse: 72A

Surface Mount Devices: Through-hole mounting.

Threshold voltage, VGS th typical: 4V

Threshold voltage, VGS TH maximum: 4V.

IRF640 in TO-220AB package.

Transistor polarity: n-channel.

Drain current, ID max: 18A

Voltage, VDS Max: 200V

On-state resistance, rds(on):

Voltage @ RDS measurement: 10V

Voltage, VGS Max: 4V

Package Type: TO-220AB

Number of pins: 3 power, PD: 150W

Package Type: TO-220AB

Transistor type: MOSFET

Thermal resistance, junction to housing a: 1°C W

Voltage VGS @ RDS ON Measurements: 10V Voltage, VDS Typical: 200V

Current, id continuous: 18A

Current, IDM pulse: 72A

Surface Mount Devices: Through-hole mounting.

Threshold voltage, VGS th typical: 4V

Threshold voltage, VGS TH maximum: 4V.

1. The IRF640 is Vishay's third-generation POWER generation, which provides designers with a powerful combination of fast conversion, ruggedness, low on-resistance, and high efficiency.

2. The IRF640 in TO-220 package is generally suitable for industrial and commercial applications with a power consumption of about 50W, and the TO-220 package with low thermal resistance and low cost makes IRF640 widely recognized by the industry. The IRF640 in a D2PAK package is suitable for chip mounting, providing the highest power and lowest on-resistance compared to any other chip package available. The IRF640's D2PAK package accommodates high-current applications.

The IRF640's TO-262 is suitable for low-end through-hole mounting.