What is the difference between germanium transistor and boronlanide?

Both silicon transistors and germanium transistors have a current amplification effect, but the difference is that the dead zone voltage of silicon transistors is larger than that of germanium transistors; The on-voltage of a silicon transistor is about.

Yours is the one who can do it, who said to give it to others, it should be the one with less volume, and if you manage it recently, the physique should be a little bigger.

Because of these two, the trace elements contained in it are different, so the effect of use in this area is also different, so you must pay attention.

The difference between the transistors and the Pennan drama is that some of their form factors are not quite the same.

The difference between plated transistors is that the cost performance is different, and the materials are also different.

Silicon is a relatively stable element, its transistors are pure SiO2, can react with HF (hydrofolamic acid), and are very transparent.

Whereas, germanium belongs to the metal element and is used for single crystals.

X-ray diffraction method determines its crystal structure, which is very professional, and it is not possible without equipment, so it is necessary to distinguish from silicon!!

Hello:——1. Due to the different semiconductor materials used, the main difference between germanium tube and silicon tube is that the leakage current of germanium tube is much greater than that of silicon tube, and with the increase of temperature, the leakage current will also rise sharply.

That is, the "thermal stability" of germanium tubes is very poor. This is the main reason why germanium tubes are basically eliminated.

2. You can do an experiment: The germanium tube C is connected to the negative pole of 6V through a 2K resistor, the electrode E is connected to the positive pole, and the base electrode B is suspended. Measure its leakage current; , silicon tube C is connected to the positive pole of 6V through a 2K resistor, the electrode E is connected to the negative pole, and the base B is suspended.

Measure its leakage current; The results can prove how different the stability of the two is!

3. Silicon tubes for transistor radios still have great advantages, especially the stability is very good. However, there are "two sides" in everything, and the efficiency of germanium tubes is still higher when using power amplifiers without output transformers (OTL). You can use a hybrid design, high-frequency, medium-frequency, pre-low-level silicon tubes, and power amplifiers with germanium tubes.

3DJ6 is a model named after a domestic transistor, MOSFET, material: silicon.

The meaning of the naming letters and numbers of the domestic transistor:

3 - Transistor.

a, b - germanium material.

c, d - silicon material.

The force component G6 is a silicon tube, which is commonly used because it is relatively soft.

Transistor 3DG, six is silicon tube she is not live to play, this material is not the same.

Silicon. Only domestic silicon will use C and D for naming. Germanium, named after a, b.

This one of the transistors is a silicon tube.

Transistors 3DG, 6 are silicon tubes.

Transistor 3 dg 6 silicon tube or plug pipe is better.

1. Unipolar transistors.

Unipolar transistors are also known as field effect transistors, or FETs (Field Effect Transistors). It is a voltage-controlled device that controls the output current by the electric field effect generated by the input voltage. When it works, only one type of carrier (most carriers) participates in the conduction of electricity, so it is called a unipolar transistor.

Features: High input resistance up to 107 1015, insulated gate FETs up to 1015.

Low noise, good thermal stability, simple process, easy integration, easy control of device characteristics, low power consumption, small size, low cost. Classification:

According to the different materials, it can be divided into junction field effect transistor (JFET) and insulated gate FET (insulated gate FET). 2. Bipolar transistors.

A bipolar transistor, also known as a transistor, is a current-controlled device that controls the output current by the input current, and has a current amplification effect. When it works, there are two kinds of carriers, electrons and holes, which participate in the conduction process, so it is called a bipolar triode. Features:

Transistors can be used to amplify weak signals and to switch without contact. It has a series of unique advantages such as firm structure, long life, small size, and low power consumption, so it has been widely used in various fields. Classification:

Depending on the material, the transistor can be divided into silicon tube (Si) and germanium tube (Ge).

The reverse leakage current of silicon transistor is small, the withstand voltage is high, the temperature drift is small, and it can work at higher temperatures and withstand large power losses. The germanium transistor has a large gain and good frequency response, especially for low-voltage lines.